Light absorption and electrical transport in Si:O alloys for photovoltaics
| Autor: | Isodiana Crupi, Francesca De Simone, F. Priolo, R. Lo Savio, M. A. Di Stefano, S. Di Marco, G. Di Martino, Salvo Mirabella, Maria Miritello, S. Gibilisco |
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| Přispěvatelé: | Mirabella, S., Di Martino, G., Crupi, I., Gibilisco, S., Miritello, M., Lo Savio, R., Di Stefano, M., Di Marco, S., Simone, F., Priolo, F. |
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Absorption spectroscopy Four-point Analytical chemistry General Physics and Astronomy Absorption coefficient Chemical vapor deposition Boron implantation Settore ING-INF/01 - Elettronica Settore FIS/03 - Fisica Della Materia symbols.namesake Electrical resistivity and conductivity Plasma-enhanced chemical vapor deposition Thin film Absorption (electromagnetic radiation) Electrical sheet resistance Si content SEMIINSULATING POLYCRYSTALLINE SILICON SOLAR-CELLS 3RD-GENERATION PHOTOVOLTAICS OPTICAL-PROPERTIES AMORPHOUS-SILICON THIN-FILMS CRYSTALLINE Optical absorption Probe method Electrical resistivity Alloy deposition Sputter deposition Electrical transport symbols Oxygen-rich silicon Raman spectroscopy Optical gap Reflectance spectrum Photovoltaic |
| Zdroj: | Journal of applied physics 108 (2010): 093507–093507. doi:10.1063/1.3503852 info:cnr-pdr/source/autori:Mirabella S, Di Martino G, Crupi I, Gibilisco S, Miritello M, Lo Savio R, Di Stefano MA, Di Marco S, Simone F, Priolo F/titolo:Light absorption and electrical transport in Si:O alloys for photovoltaics/doi:10.1063%2F1.3503852/rivista:Journal of applied physics/anno:2010/pagina_da:093507/pagina_a:093507/intervallo_pagine:093507–093507/volume:108 |
| DOI: | 10.1063/1.3503852 |
| Popis: | Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and independently modulated by acting on different parameters. The light absorption increases (by one decade) with the Si content in the 43-100 at. % range, determining an optical band gap which can be continuously modulated into the 2.6-1.6 eV range, respectively. The a-c phase transition in Si:O films, causing a significant reduction in the absorption coefficient, occurs at increasing temperatures (from 600 to 1100 °C) as the Si content decreases. The electrical resistivity of Si:O films can be varied among five decades, being essentially dominated by the number of Si grains and by the doping. Si:O alloys with Si content in the 60-90 at. % range (named oxygen rich silicon films), are proved to join an appealing optical gap with a viable conductivity, being a good candidate for increasing the conversion efficiency of thin-film photovoltaic cell. © 2010 American Institute of Physics. |
| Databáze: | OpenAIRE |
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