Single events induced by heavy ions and laser pulses in silicon schottky diodes
| Autor: | Fabien Widmer, Delphine Lagarde, Pierre Calvel, Xavier Marie, Eric Lorfevre, N. Chatry, M. Mauguet, R. Marec, Francoise Bezerra |
|---|---|
| Přispěvatelé: | TRAD, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA), Centre National d’Etudes Spatiales, Thales Alenia Space, Centre National d'Etudes Spatiales, French Space Agency, TRAD, the Centre National d'Etudes Spatiales, Thales Group, Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Nuclear and High Energy Physics
laser pulses Materials science Silicon Aperture [SDV]Life Sciences [q-bio] chemistry.chemical_element 02 engineering and technology 01 natural sciences Heavy ions Ion Semiconductor laser theory law.invention transient law Electric field 0103 physical sciences Schottky diode Electrical and Electronic Engineering 010308 nuclear & particles physics business.industry single-event burnout (SEB) 021001 nanoscience & nanotechnology Laser trench structure Nuclear Energy and Engineering chemistry Optoelectronics Transient (oscillation) 0210 nano-technology business |
| Zdroj: | IEEE Transations on Nuclear Science Conference on Radiation and Its Effects on Components and Systems Conference on Radiation and Its Effects on Components and Systems, Oct 2017, Genève, Switzerland. pp.8, ⟨10.1109/TNS.2018.2813096⟩ |
| Popis: | International audience; This paper is dedicated to the investigation of single-event effects (SEEs) in different types of silicon Schottky diodes using heavy ions and laser pulses. The objectives are both to progress in heavy ions and laser correlations using simple devices and to further understand the impact of optical and electrical parameters on photogeneration in Schottky diodes to contribute to the use of pulsed lasers for single-event sensitivity studies. Heavy ion test results on planar and trenched commercial Schottky diodes are presented. Based on these results, pulsed laser tests and transient measurements were performed on the sensitive devices. Destructive single events were evidenced with both techniques. Significant parameters of the laser tests, such as backside aperture of the device, electrical and optical configuration are discussed. These investigations show the potential of laser testing for Schottky diode SEE sensitivity study. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|