Effects of nitridation on SiC/SiO$_2$ structures studied by hard X-ray photoelectron spectroscopy
| Autor: | Tomas Wiell, Manesh V. Mistry, Anna Regoutz, J. Matthias Kahk, Thomas Aichinger, Judith Berens, Sebastian Bichelmaier, Nathalie K. Fernando, Pardeep K. Thakur, Susanna K. Eriksson, Gregor Pobegen, Manfred Mascheck, Tien-Lin Lee, Johannes Lischner |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Chemical process Condensed Matter - Materials Science Passivation Silicon Band gap Materials Science (miscellaneous) chemistry.chemical_element Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences 02 engineering and technology Semiconductor device Dielectric 021001 nanoscience & nanotechnology 01 natural sciences 7. Clean energy Engineering physics chemistry.chemical_compound General Energy X-ray photoelectron spectroscopy chemistry 0103 physical sciences Materials Chemistry Silicon carbide 0210 nano-technology |
| DOI: | 10.48550/arxiv.1912.06592 |
| Popis: | SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and thermal conductivity. The main challenge for further development of SiC-based power semiconductor devices is the quality of the interface between SiC and its native dielectric SiO2. High temperature nitridation processes can improve the interface quality and ultimately the device performance immensely, but the underlying chemical processes are still poorly understood. Here, we present an energy-dependent hard x-ray photoelectron spectroscopy (HAXPES) study probing non-destructively SiC and SiO2 and their interface in device stacks treated in varying atmospheres. We successfully combine laboratory- and synchrotron-based HAXPES to provide unique insights into the chemistry of interface defects and their passivation through nitridation processes. |
| Databáze: | OpenAIRE |
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