Diffusion and Interaction of In and As Implanted into SiO2 Films
| Autor: | A. N. Mikhaylov, Ida E. Tyschenko, M. Voelskow, D. I. Tetelbaum |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Annealing (metallurgy) Analytical chemistry chemistry.chemical_element 02 engineering and technology In 01 natural sciences Nanoclusters law.invention Condensed Matter::Materials Science law 0103 physical sciences Physics::Atomic and Molecular Clusters ion implantation Physics::Atomic Physics Spectroscopy As 010302 applied physics diffusion 021001 nanoscience & nanotechnology Condensed Matter Physics Rutherford backscattering spectrometry Nitrogen Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials silicon oxide chemistry Electron microscope 0210 nano-technology |
| Zdroj: | Semiconductors 53(2019)8, 1004-1010 |
| Popis: | By means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO2 films to concentrations of about 1.5 at % are studied in relation to the temperature of subsequent annealing in nitrogen vapors in the range of T = 800–1100°C. It is found that annealing at T = 800–900°C results in the segregation of As atoms at a depth corresponding to the As+-ion range and in the formation of As nanoclusters that serve as sinks for In atoms. An increase in the annealing temperature to 1100°C yields the segregation of In atoms at the surface of SiO2 with the simultaneous enhanced diffusion of As atoms. The corresponding diffusion coefficient is DAs = 3.2 × 10–14 cm2 s–1. |
| Databáze: | OpenAIRE |
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