YSZ thin films with minimized grain boundary resistivity
Autor: | Nigel D. Browning, Hao Yang, Sangtae Kim, Edmund M. Mills, Yayoi Takamura, Matthias Kleine-Boymann, Juergen Janek |
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Rok vydání: | 2016 |
Předmět: |
Chemical Physics
Materials science Analytical chemistry General Physics and Astronomy 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Engineering Electrical resistivity and conductivity Physical Sciences Chemical Sciences Fast ion conductor Ionic conductivity Grain boundary diffusion coefficient Grain boundary Crystallite Physical and Theoretical Chemistry Thin film 0210 nano-technology Single crystal |
Zdroj: | Mills, EM; Kleine-Boymann, M; Janek, J; Yang, H; Browning, ND; Takamura, Y; et al.(2016). YSZ thin films with minimized grain boundary resistivity. Physical Chemistry Chemical Physics, 18(15), 10486-10491. doi: 10.1039/c5cp08032k. UC Davis: Retrieved from: http://www.escholarship.org/uc/item/79g2h40w Physical chemistry chemical physics : PCCP, vol 18, iss 15 |
ISSN: | 1463-9084 1463-9076 |
DOI: | 10.1039/c5cp08032k |
Popis: | © the Owner Societies 2016. In recent years, interface engineering of solid electrolytes has been explored to increase their ionic conductivity and improve the performance of solid oxide fuel cells and other electrochemical power sources. It has been observed that the ionic conductivity of epitaxially grown thin films of some electrolytes is dramatically enhanced, which is often attributed to effects (e.g. strain-induced mobility changes) at the heterophase boundary with the substrate. Still largely unexplored is the possibility of manipulation of grain boundary resistivity in polycrystalline solid electrolyte films, clearly a limiting factor in their ionic conductivity. Here we report that the ionic conductivity of yttria stabilized zirconia thin films with nano-columnar grains grown on a MgO substrate nearly reaches that of the corresponding single crystal when the thickness of the films becomes less than roughly 8 nm (smaller by a factor of three at 500 °C). Using impedance spectroscopy, the grain boundary resistivity was probed as a function of film thickness. The resistivity of the grain boundaries near the film-substrate interface and film surface (within 4 nm of each) was almost entirely eliminated. This minimization of grain boundary resistivity is attributed to Mg2+diffusion from the MgO substrate into the YSZ grain boundaries, which is supported by time of flight secondary ion mass spectroscopy measurements. We suggest grain boundary "design" as an attractive method to obtain highly conductive solid electrolyte thin films. |
Databáze: | OpenAIRE |
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