Random telegraph signals caused by a single dopant in a metal–oxide–semiconductor field effect transistor at low temperature
| Autor: | Shinichi Saito, Isao Tomita, Kouta Ibukuro, Zuo Li, Fayong Liu, Harvey N. Rutt, Joseph William Hillier, Muhammad Husain, Yoshishige Tsuchiya |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Dopant Silicon business.industry General Physics and Astronomy chemistry.chemical_element Context (language use) 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences lcsh:QC1-999 Threshold voltage Quantum technology Depletion region chemistry 0103 physical sciences Optoelectronics Field-effect transistor 0210 nano-technology business lcsh:Physics |
| Zdroj: | AIP Advances, Vol 10, Iss 5, Pp 055025-055025-13 (2020) |
| ISSN: | 2158-3226 |
| Popis: | While the importance of atomic-scale features in silicon-based device for quantum application has been recognized and even the placement of a single atom is now feasible, the role of a dopant in the substrate has not attracted much attention in the context of quantum technology. In this paper, we report random telegraph signals (RTSs) originated from trapping and detrapping of an electron by a donor in the substrate of a p-type metal–oxide–semiconductor field-effect-transistor. RTSs, not seen when the substrate was grounded, were observed when a positive bias was applied to the substrate. The comprehensive study on the signals observed reveals that the nature of the RTSs is discrete threshold voltage variations due to the change in the depletion layer width depending on the charge state of a single dopant, neutral or positively charged. |
| Databáze: | OpenAIRE |
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