Impact study of the process thermal budget of advanced CMOS nodes on SiGe HBT performance
| Autor: | Pascal Chevalier, Didier Celi, O. Saxod, Thomas Zimmer, V.T. Vu, T. Rosenbaum, Sebastien Fregonese |
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| Přispěvatelé: | fregonese, sebastien, STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2015 |
| Předmět: |
010302 applied physics
Materials science Fabrication [SPI] Engineering Sciences [physics] Heterojunction bipolar transistor Doping 01 natural sciences Engineering physics Capacitance Silicon-germanium [SPI]Engineering Sciences [physics] chemistry.chemical_compound CMOS chemistry 0103 physical sciences Thermal Electronic engineering ComputingMilieux_MISCELLANEOUS Sheet resistance |
| Zdroj: | Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 2015 IEEE, Oct 2015, Boston, United States |
| Popis: | The objective of this paper is to predict the main electrical characteristics of SiGe NPN HBTs, like the transit frequency fT, internal capacitances and pinched base sheet resistance for the next CMOS nodes by means of process and hydrodynamic simulations. The as-deposited BiCMOS055 vertical doping profile is exposed to the thermal budgets from existing CMOS040, CMOS028, CMOS028FDSOI and CMOS014FDSOI technologies by TCAD simulation. Obtained results show that, thanks to the reduction of the process thermal budget, the maximum fT could reach 370 GHz with two different assumptions: identical doping level at both BE and BC junctions and identical BE capacitance. Additionally, the evolution of the dopants’ diffusion with ST's fabrication steps is clarified for BiCMOS055 in this study. |
| Databáze: | OpenAIRE |
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