High-NA EUV lithography exposure tool progress
| Autor: | Jan van Schoot, Eelco van Setten, Jo Finders, Joerg Zimmermann, Judon Stoeldraijer, Peter Kuerz, Frank Bornebroek, Marco Pieters, Kars Zeger Troost, Winfried Kaiser, Sjoerd Lok, Rob van Ballegoij, Paul Graeupner |
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| Rok vydání: | 2019 |
| Předmět: |
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Computer science business.industry Extreme ultraviolet lithography ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION 02 engineering and technology Overlay 021001 nanoscience & nanotechnology 01 natural sciences law.invention Numerical aperture 010309 optics Lens (optics) Image stitching law 0103 physical sciences 0210 nano-technology business Focus (optics) Lithography Computer hardware |
| Zdroj: | Extreme Ultraviolet (EUV) Lithography X |
| DOI: | 10.1117/12.2515205 |
| Popis: | While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are readying to start high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The purpose of this high-NA scanner, targeting an ultimate resolution of 8nm, is to extend Moore’s law throughout the next decade. A novel lens design, capable of providing the required Numerical Aperture, has been identified; this lens will be paired with new, faster stages and more accurate sensors enabling the tight focus and overlay control needed for future process nodes. In this paper an update will be given on the status of the developments at ZEISS and ASML. Next to this, we will address several topics inherent in the new design and smaller target resolution: M3D effects, polarization, focus control and stitching. |
| Databáze: | OpenAIRE |
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