Study of Neutron Pre-Irradiated Silicon for Nuclear Detectors

Autor:	V. Khivrich, L.I. Barabash, G.-F.D. Betta, V. Lastovetsky, L. Polivtsev, Maurizio Boscardin, J. Wyss, V. Khomenkov, Nicola Zorzi, A. Groza, P.G. Litovchenko, Dario Bisello, Sabina Ronchin, Riccardo Rando, W. Wahl, A. Candelori, A.P. Litovchenko, A. Dolgolenko
Předmět:	Materials science Silicon Physics::Instrumentation and Detectors business.industry Physics::Medical Physics Doping Radiochemistry chemistry.chemical_element Radiation Neutron radiation chemistry Optoelectronics Neutron Irradiation business Radiation hardening Order of magnitude
Zdroj:	Maurizio Boscardin Scopus-Elsevier Fondazione Bruno Kessler-IRIS
Popis:	The ways of increasing the radiation hardness of silicon were considered. It was then experimentally shown that a preliminary irradiation of the bulk silicon introduces sinks for radiation defects that leads to an increased radiation hardness of the silicon. Neutron transmutation doping of silicon can be considered as one form of preliminary radiation. It was shown that for neutron transmutated silicon the carrier removal rate in NTD after /spl gamma/-irradiation is more than one order of magnitude smaller than in a standard reference specimen, but the carriers removal rate after neutron irradiation is approximately a factor of two less.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b32d64668b2a80a6ddca87a9bb525f99 https://cris.fbk.eu/handle/11582/2213 Zobrazit plný text záznamu