Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons

Autor:	Konoreva, O.V., Lytovchenko, M.V., Malyi, Ye.V., Petrenko, I.V., Pinkovska, M.B., Tartachnyk, V.P., Shlapatska, V.V.
Rok vydání:	2015
Předmět:	Materials science business.industry law Optoelectronics Degradation (geology) Electron Electrical and Electronic Engineering business Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Light-emitting diode law.invention
Zdroj:	Semiconductor Physics Quantum Electronics and Optoelectronics. 18:312-316
ISSN:	1605-6582 1560-8034
Popis:	The study of electrical and optical characteristics of GaP LEDs irradiated with electrons (E = 2 MeV, Ф = 0…10¹⁵ cm⁻²) was performed. Especial interest was focused on appearing of S-type instability in current-voltage characteristics and its mechanism in accord with the model by K. Maeda. Made in this work was the analysis of changes in the concentration of deep recombination levels caused be irradiation. The coefficient of radiation damages of charge carrier lifetime in GaP was estimated (kτ = 1.5·10⁷7 s·cm⁻²). It was discovered that the luminescence intensity recovering after isochronous annealing possesses two stages. Heating the diodes up to T > 350 °C leads to destruction of p-region in the diode and deterioration of lens optical transmission.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b27b3f823f3a501ce6c10d0938858e02 https://doi.org/10.15407/spqeo18.03.312 Zobrazit plný text záznamu Plný text ve formátu PDF