Autor: |
Yiwen Shi, Peter G. Schunemann, Marius Rutkauskas, Kerr Johnson, Derryck T. Reid, C. Farrell, Jake Charsley, Luke Maidment |
Rok vydání: |
2021 |
Předmět: |
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Zdroj: |
Conference on Lasers and Electro-Optics. |
Popis: |
Orientation-patterned gallium phosphide [1] (OPGaP) is a wide-bandgap material enabling two-photonabsorption-free pumping using 1040-nm Yb-lasers, and such OPGaP optical parametric oscillators (OPOs) have been applied in Fourier-transform [2] and dual-comb [3] spectroscopies across the 5–12-μm molecular fingerprint region. Hetero-epitaxial growth of GaP on orientation-patterned gallium arsenide (OPGaAs) templates has been developed [4] , to mitigate issues with GaP substrates, but no nonlinear frequency conversion has yet been demonstrated. Here we report the first efficient frequency conversion in OPGaP-on-OPGaAs. OPGaP layers up to 1.2-mm thick were grown by hydride vapor-phase epitaxy (HVPE) on a 3-inch MBE-grown OPGaAs template. Several multi-grating and fan-out crystals of lengths 1.1 mm and 2.9 mm were diced from the wafer and polished into plane-parallel chips, and a broadband anti-reflection coating was applied to both faces. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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