Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies
| Autor: | Tibault Reveyrand, Michel Stanislawiak, Philippe Eudeline, Didier Floriot, Jerome Cheron, Michel Campovecchio, Denis Barataud |
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| Přispěvatelé: | C2S2 (XLIM-C2S2), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Thales Air Systems, Thales Group [France]-Thales Group [France], Thales Group [France], UMS |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Transistor Bandwidth (signal processing) 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor law.invention [SPI.TRON]Engineering Sciences [physics]/Electronics law 0202 electrical engineering electronic engineering information engineering Electronic engineering Harmonic Optoelectronics S band Electrical and Electronic Engineering Wideband business High electron Electrical impedance |
| Zdroj: | International Journal of Microwave and Wireless Technologies International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2013, 5 (4), pp.437-445. ⟨10.1017/S1759078713000032⟩ |
| ISSN: | 1759-0787 1759-0795 |
| DOI: | 10.1017/S1759078713000032⟩ |
| Popis: | International audience; This paper presents a design method of internally-matched packaged GaN high electron mobility transistors (HEMTs) for achieving not only high-efficiency and high-power performances but also a wide bandwidth and insensitivity to harmonic terminations in the S-band. The package and its internal matching networks are synthesized to confine the second harmonic impedances seen by the GaN die to high-efficiency regions whatever the harmonic impedances presented outside the package. This paper reports the design of a packaged GaN HEMT achieving 78% of power-added-efficiency (PAE) and 25 W of output power at 2.5 GHz. A packaged GaN power bar is also reported with the addition of fundamental matching networks inside the package. In 50V environment, the packaged GaN power bar provided more than 56% of PAE from 2.5 to 3.1 GHz and was desensitized to harmonic load variations with less than two points of PAE variation when a load-pull is performed at second harmonic frequencies outside the package. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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