Irradiation induced pulsations of reverse biased metal oxide/silicon structures
| Autor: | V. Golovanov, M. Ivanovskaya, Amita Chandra, Dietmar Fink, David Fuks, A. de O. D. Silva, L. Khirunenko, M. de A. Rizutto, M. Tabacnics, Arnold E. Kiv |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon Astrophysics::High Energy Astrophysical Phenomena Oxide Analytical chemistry chemistry.chemical_element Molecular physics TRANSISTORES chemistry.chemical_compound Swift heavy ion Amplitude chemistry Electrical resistivity and conductivity Irradiation Electric potential Voltage |
| Zdroj: | Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual) Universidade de São Paulo (USP) instacron:USP |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.2773950 |
| Popis: | Specific electronic features have been found in structures consisting of metal oxide layers on silicon substrates upon swift heavy ion irradiation. These features are linked to the appearance of radiation-induced negative differential resistances in the structures. In the reversed bias direction they show high frequency current pulsations at around ∼10kHz frequency. Their amplitude increases with increasing applied voltage. The pulsation frequency also shows a small increase. The current amplitude depends on the ion fluence and flux. |
| Databáze: | OpenAIRE |
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