Mn-induced growth of InAs nanowires

Autor: Mauro Rovezzi, Francesco d'Acapito, F. Jabeen, V. Grillo, Silvia Rubini, Federico Boscherini, M. Piccin, Laura Felisari, Faustino Martelli, G. Bais
Přispěvatelé: F. Jabeen, M. Piccin, L. Felisari, V. Grillo, G. Bai, S. Rubini, F.Martelli, F. d’Acapito, M. Rovezzi, F. Boscherini
Rok vydání: 2010
Předmět:
Zdroj: Journal of vacuum science & technology. B, Microelectronics and nanometer structures 28 (2010): 478–483. doi:10.1116/1.3385892
info:cnr-pdr/source/autori:Jabeen F., Piccin M., Felisari L., Grillo V., Bais G., Rubini S., Martelli F., d'Acapito F., Rovezzi M. and Boscherini F./titolo:Mn-induced growth of InAs nanowires/doi:10.1116%2F1.3385892/rivista:Journal of vacuum science & technology. B, Microelectronics and nanometer structures/anno:2010/pagina_da:478/pagina_a:483/intervallo_pagine:478–483/volume:28
ISSN: 2166-2754
2166-2746
DOI: 10.1116/1.3385892
Popis: InAs nanowires have been grown by molecular beam epitaxy using Mn as growth catalyst. Nanowires (NWs) have been obtained on SiO2 and oxidized GaAs for growth temperatures in the range of 370-410 degrees C. The growth temperature is found to be the same as that of the growth of Au-catalyzed InAs wires. These results suggest that the InAs NWs grow with the Mn nanoparticle in the solid phase and allow some comparison with the existing models for Au-catalyzed nanowires. The morphology and the lattice structure were investigated by electron microscopy techniques. The lattice of the wire body is found to be mainly wurtzite InAs. Mn K-edge x-ray absorption fine structure was used to determine the local environment of the Mn atoms: The authors found that most of the Mn atoms are found in a hexagonal MnAs phase. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3385892]
Databáze: OpenAIRE