Investigation of reactive phase formation in the Al–Cu thin film systems

Autor: Marie-Christine Record, Fanta Haidara, Dominique Mangelinck, Benjamin Duployer
Přispěvatelé: Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Aix Marseille Université (AMU), Centre interuniversitaire de recherche et d'ingenierie des matériaux (CIRIMAT), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)
Rok vydání: 2012
Předmět:
Zdroj: Surface and Coatings Technology
Surface and Coatings Technology, 2012, 206 (19-20), pp.3851-3856. ⟨10.1016/j.surfcoat.2012.01.065⟩
Surface and Coatings Technology, Elsevier, 2012, 206 (19-20), pp.3851-3856. ⟨10.1016/j.surfcoat.2012.01.065⟩
ISSN: 0257-8972
1879-3347
Popis: This work is an investigation on the phase formation in Al–Cu thin film systems. This investigation was carried out on eight samples with different Cu/Al thickness ratios (0.29, 0.56, 0.71, 0.87, 1.07, 1.26, 1.58 and 2.38). The corresponding compositions of these samples are 29, 44, 50, 55, 60, 64, 69 and 77 at.% Cu. The samples were prepared by sputtering and characterized using in situ resistance measurements, and in-situ X-ray Diffraction (XRD). The sequence of phase formation was evidenced from this study. In addition, the energies of activation of Al 2 Cu and Al 4 Cu 9 were calculated using simulations of the XRD and resistivity results, and the resistivity values of AlCu, Al 2 Cu 3 and Al 4 Cu 9 were determined at room temperature.
Databáze: OpenAIRE