| Autor: |
David Smith, Yasir J. Noori, Gillian Reid, Kees de Groot, Richard Beanland, Philip N. Bartlett, Ruomeng Huang, Ayoub H. Jaafar, Lingcong Meng, Wenjian Zhang, Yisong Han |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Popis: |
In this work, we report on the fabrication of resistive random-access memory cells based on electrodeposited GeSbTe material between TiN top and bottom electrodes in a crossbar architecture. The cells exhibit asymmetric bipolar resistive switching characteristics under the same SET and RESET compliance current (CC), showing highly uniform and reproducible switching properties. A multi-state switching behavior can be also achieved by varying the sweeping voltage and CC. Unlike phase-change switching, the switching between the high-resistance state and the low-resistance state in these cells can be attributed to the formation and rupture of conductive Te bridge(s) within the Te-rich GeSbTe matrix upon application of a high electric field. The results point toward the usage of the electrodeposition method to fabricate advanced functional device structures for application in non-volatile memory. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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