Conformal atomic layer deposition of TA-based diffusion barrier film using a novel mono-guanidinate precursor
| Autor: | Brizé, Alexis Farcy, Stéphane Daniele, Béatrice Doisneau, Thibaut Cornier, Arnaud Mantoux, Elisabeth Blanquet, Prieur T, Raphaël Boichot |
|---|---|
| Přispěvatelé: | Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Institut de recherches sur la catalyse et l'environnement de Lyon (IRCELYON), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), STMicroelectronics |
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Diffusion barrier Reducing agent Biomedical Engineering Tantalum chemistry.chemical_element Bioengineering [CHIM.MATE]Chemical Sciences/Material chemistry General Chemistry Substrate (electronics) 010402 general chemistry 010403 inorganic & nuclear chemistry Condensed Matter Physics 01 natural sciences 0104 chemical sciences Atomic layer deposition Planar chemistry Chemical engineering General Materials Science Thin film Quartz |
| Zdroj: | Journal of Nanoscience and Nanotechnology Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2011, 11 (9), pp.8383-8386. ⟨10.1166/jnn.2011.5057⟩ |
| ISSN: | 1533-4880 |
| Popis: | International audience; In this work, we present elaboration of Ta-based thin films by ALD from a novel tantalum precursor, the eta(2)-N, N'-isopropylethylguanidinato-tetra-diethylamino tantalum ([eta(2)-(i)PrNC(NEt(2))NEt]Ta(NEt(2))(4), IEGTDEAT). Ammonia was used as reducing agents. The experimental conditions were optimized by quartz microgravimetry, studying the influence of duration of precursors and purge pulses and the substrate temperature. An optimal deposition temperature of 260 degrees C was showed. Ta-based thin films deposited on planar and patterned substrates showed a perfect conformality and continuity, even at low number of cycles. |
| Databáze: | OpenAIRE |
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