Analytic modeling of breakdown voltage shift in the CMOS buried multiple junction detector
| Autor: | Guo-Neng Lu, Thais Luana Vidal de Negreiros da Silva, P. Kleimann, Patrick Pittet |
|---|---|
| Přispěvatelé: | INL - Lab-On-Chip et Instrumentation (INL - LOCI), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Conception de Systèmes Hétérogènes (INL - CSH) |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Gaussian Detector Doping Thermionic emission 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Computational physics [SPI.TRON]Engineering Sciences [physics]/Electronics symbols.namesake CMOS Depletion region Electric field 0103 physical sciences Materials Chemistry symbols Breakdown voltage Electrical and Electronic Engineering 0210 nano-technology ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Solid-State Electronics Solid-State Electronics, Elsevier, 2020, 164, pp.107682. ⟨10.1016/j.sse.2019.107682⟩ |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2019.107682⟩ |
| Popis: | We propose an analytical model for the CMOS Buried Multiple Junction (BMJ) detector exhibiting breakdown voltage shift depending on adjacent junction’s bias. The device’s singular behavior has been observed when two adjacent junctions are in reach-through (RT) condition. The breakdown current has been identified to be predominated by thermionic emission. The proposed model determines, for a given BMJ structure with uniform or Gaussian doping distributions under bias conditions, whether two adjacent junctions are in RT condition. In this case, it calculates the merged depletion limits, electric field and electrostatic potential profile. The potential barrier height of each merged depletion region can then be extracted and the thermionic current be computed. Model computations have been compared with TCAD simulations and measurements on the BMJ detector. Good agreements have been observed for different structures in different bias conditions at different temperatures. |
| Databáze: | OpenAIRE |
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