Spin-orbit interaction in a dual gated InAs/GaSb quantum well
| Autor: | Fanming Qu, Michael J. Manfra, Andrey A. Kiselev, Arjan J. A. Beukman, Fabrizio Nichele, Rafal Skolasinski, David de Vries, Jasper van Veen, Leo P. Kouwenhoven, Folkert K. de Vries, Wei Yi, Michael Wimmer, Binh-Minh Nguyen, Charles Marcus, Marko Sokolich |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Quenching
Physics Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter::Other FOS: Physical sciences 02 engineering and technology Electron Spin–orbit interaction 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Condensed Matter::Materials Science Spin splitting Electric field Beta (plasma physics) 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Condensed Matter::Strongly Correlated Electrons 010306 general physics 0210 nano-technology Quantum well Spin-½ |
| Zdroj: | Physical Review B, 96(24) |
| ISSN: | 2469-9950 |
| Popis: | Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $\beta =$ 28.5 meV$\AA$ and the Rashba coefficient $\alpha$ is tuned from 75 to 53 meV$\AA$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations. |
| Databáze: | OpenAIRE |
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