Growth mode and interface structure of ag on the HF-treated Si(111)
| Autor: | G. ter Horst, G.N. van den Hoven, A. R. Schlatmann, P. M. Zagwijn, F. Garten, Akira Nishiyama, Joost W. M. Frenken, J. Vrijmoeth |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1996 |
| Předmět: |
Silicon
Silver Hydrogen Chemistry Schottky barrier Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Medium energy ion scattering (MEIS) Condensed Matter Physics Epitaxy Surfaces Coatings and Films Elastic recoil detection Metal-semiconductor interfaces Vacuum deposition Monolayer Materials Chemistry Thin film |
| Zdroj: | Surface Science, 350(1-3), 229-238. ELSEVIER SCIENCE BV |
| ISSN: | 0039-6028 |
| Popis: | A growth mode and interface structure analysis has been performed for Ag deposited at a high temperature of 300°C on the HF-treated Si(111):H surface by means of medium-energy ion scattering and elastic recoil detection analysis of hydrogen. The measurements show that Ag grows in the Volmer-Weber mode and that the Ag islands on the surface are epitaxial with respect to the substrate. The preferential azimuthal orientation is A-type only when Ag is deposited slowly. The interface does not reconstruct to the √3 × √3-Ag structure, which is normally observed for Ag deposition above 200°C on the Si(111)7 × 7 surface, but retain bulk-like structure. The presence of hydrogen at the interface is demonstrated after deposition of thick (1100 A) Ag films. However, the amount of hydrogen at the interface is not a full monolayer. This partial desorption of hydrogen from the interface explains why the Schottky barrier heights of Ag Si (111) : H diodes are close to those of Ag Si (111)7 × 7 and Ag Si (111)2 × 1 . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect