Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

Autor: Agnès Trassoudaine, Dominique Castelluci, Geoffrey Avit, Catherine Bougerol, Jihen Jridi, Philip A. Shields, Pierre Ferret, Evelyne Gil, Mohammed Zeghouane, Yamina André, Vladimir G. Dubrovskii, Pierre-Marie Coulon
Přispěvatelé: Institut Pascal (IP), SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne [2017-2020] (UCA [2017-2020])-Centre National de la Recherche Scientifique (CNRS), ITMO University [Russia], Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), University of Bath [Bath], Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CNRS PRC1300 CNRS-JSPSANR-11-LABX-0014ANR-10-LABX-1601Auvergne FEDER FundsIDEX-SITE 16mIDEX-0001 CAP 20-25Russian Foundation for Basic ResearchEPSRC EP/M015181/1CPER MMASYF AURA, CNRS PRC1300 CNRS-JSPS, ANR-11-LABX-0014, ANR-10-LABX-1601, Auvergne FEDER Funds, IDEX-SITE 16mIDEX-0001 CAP 20-25, Russian Foundation for Basic Research, EPSRC EP/M015181/1, CPER MMASYF AURA, ANR-16-IDEX-0001,CAP 20-25,CAP 20-25(2016), SIGMA Clermont (SIGMA Clermont)-Centre National de la Recherche Scientifique (CNRS)-Université Clermont Auvergne [2017-2020] (UCA [2017-2020]), Nanophysique et Semiconducteurs (NPSC)
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Indium nitride
Materials science
Hydride Vapor Phase Epitaxy
Chemistry(all)
Nanowire
Biomedical Engineering
Nanorods 2
Bioengineering
02 engineering and technology
Substrate (electronics)
Epitaxy
01 natural sciences
Lattice mismatch
Selective area growth
chemistry.chemical_compound
Materials Science(all)
0103 physical sciences
General Materials Science
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
Electrical and Electronic Engineering
Selective Area Growth
[PHYS]Physics [physics]
010302 applied physics
Hydride
business.industry
General Chemistry
021001 nanoscience & nanotechnology
Atomic and Molecular Physics
and Optics
Indium Nitride
Template
chemistry
Hydride vapor phase epitaxy
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Optoelectronics
Nanorod
Nanorods
0210 nano-technology
business
Zdroj: Zeghouane, M, André, Y, Avit, G, Jridi, J, Bougerol, C, Coulon, P, Ferret, P, Castelluci, D, Gil, E, Shields, P, Dubrovskii, V G & Trassoudaine, A 2020, ' Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates ', Nano Futures, vol. 4, no. 2, 025002, pp. 1-7 . https://doi.org/10.1088/2399-1984/ab8450
Nano Futures
Nano Futures, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
Nano Futures, IOPScience, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩
ISSN: 2399-1984
DOI: 10.1088/2399-1984/ab8450
Popis: Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy on patterned GaN/c-Al 2 O 3 templates. It is shown that these voids shape, due to a high lattice mismatch between InN and GaN materials, starts from the base and extends up to a half of the total length of the nanorods. When the effect of the mismatch between substrate and nanorods becomes weaker, the hollow nanotubes close up at the top and further growth proceeds in the standard nanowire geometry without voids. This effect is observed within a wide range of growth conditions during the InN synthesis and must be taken into account for controlling the final structure of InN nanorods for different device applications.
Databáze: OpenAIRE
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