Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics
| Autor: | Robert M. Wallace, Chadwin D. Young, Pavel Bolshakov, Angelica Azcatl, Peng Zhao, Paul K. Hurley |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
High-k Field effect 02 engineering and technology Surface finish Substrate (electronics) Dielectric 01 natural sciences law.invention law Al2O3 0103 physical sciences Electrical and Electronic Engineering HfO2 High-κ dielectric 010302 applied physics business.industry Transistor 021001 nanoscience & nanotechnology Condensed Matter Physics Top-gated transistor Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optoelectronics Field-effect transistor MoS2 Substrate 0210 nano-technology Forming gas business |
| Zdroj: | Microelectronic Engineering. 178:190-193 |
| ISSN: | 0167-9317 |
| Popis: | High quality HfO2 and Al2O3 substrates are fabricated in order to study their impact on top-gate MoS2 transistors. Compared with top-gate MoS2 FETs on a SiO2 substrate, the field effect mobility decreased for devices on HfO2 substrates but substantially increased for devices on Al2O3 substrates, possibly due to substrate surface roughness. A forming gas anneal is found to enhance device performance due to a reduction in charge trap density of the high-k substrates. The major improvements in device performance are ascribed to the forming gas anneal. Top-gate devices built upon Al2O3 substrates exhibit a near-ideal subthreshold swing (SS) of ~69mV/dec and a ~10 increase in field effect mobility, indicating a positive influence on top-gate device performance even without any backside bias. Display Omitted Top-gate MoS2 FETs were fabricated on high-k dielectric substrates.A forming gas anneal enhances device performance with a reduction in Dit.Top-gate devices on Al2O3/Si showed better performance than on HfO2/Si.AFM images suggest that substrate surface roughness affects device performance. |
| Databáze: | OpenAIRE |
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