Direct determination of impact-ionization rates near threshold in semiconductors using soft-x-ray photoemission

Autor:	P. D. Kirchner, Fenton R. McFeely, E. A. Eklund, D. K. Shuh, Eduard A. Cartier
Rok vydání:	1992
Předmět:	chemistry.chemical_classification Materials science Computer simulation business.industry Scattering Monte Carlo method General Physics and Astronomy Molecular physics Impact ionization Optics Semiconductor chemistry Thin film business Inorganic compound Line (formation)
Zdroj:	Physical Review Letters. 68:831-834
ISSN:	0031-9007
DOI:	10.1103/physrevlett.68.831
Popis:	The line shape of the Al 2p core-level photoemission peak in Al 0.9 Ga 0.1 As is found to be strongly dependent on the electron kinetic energy. Using Monte Carlo transport simulations it is shown that the observed strong, asymmetric line broadening is caused by electron-phonon scattering. In agreement with the experimental observation, the simulations predict that this phonon-induced line broadening is rapidly suppressed as the core line is shifted through the impact-ionization threshold
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fd031ec4a8dcf1594b8846b3caf44c8 https://doi.org/10.1103/physrevlett.68.831 Zobrazit plný text záznamu