Ti Addition Effect on the Grain Structure Evolution and Thermoelectric Transport Properties of Hf0.5Zr0.5NiSn0.98Sb0.02 Half-Heusler Alloy
Autor: | Ki Wook Bae, Soon-Mok Choi, Junsang Cho, Sung Wng Kim, Hyun-Sik Kim, Sang-Il Kim, Taegyu Park |
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Jazyk: | angličtina |
Rok vydání: | 2021 |
Předmět: |
Technology
Materials science 02 engineering and technology 010402 general chemistry thermoelectric 01 natural sciences Thermoelectric effect half-Heusler phonon scattering General Materials Science Microscopy QC120-168.85 Condensed matter physics Phonon scattering point defect QH201-278.5 lattice thermal conductivity Atmospheric temperature range 021001 nanoscience & nanotechnology Thermoelectric materials Engineering (General). Civil engineering (General) Grain size 0104 chemical sciences TK1-9971 Grain growth Descriptive and experimental mechanics Grain boundary Electrical engineering. Electronics. Nuclear engineering Melt spinning TA1-2040 0210 nano-technology |
Zdroj: | Materials Volume 14 Issue 14 Materials, Vol 14, Iss 4029, p 4029 (2021) |
ISSN: | 1996-1944 |
DOI: | 10.3390/ma14144029 |
Popis: | Compositional tuning is one of the important approaches to enhance the electronic and thermal transport properties of thermoelectric materials since it can generate point defects as well as control the phase evolution behavior. Herein, we investigated the Ti addition effect on the grain growth during melt spinning and thermoelectric transport properties of Hf0.5Zr0.5NiSn0.98Sb0.02 half-Heusler compound. The characteristic grain size of melt-spun ribbons was reduced by Ti addition, and very low lattice thermal conductivity lower than 0.27 W m−1 K−1 was obtained within the whole measured temperature range (300–800 K) due to the intensified point defect (substituted Ti) and grain boundary (reduced grain size) phonon scattering. Due to this synergetic effect on the thermal transport properties, a maximum thermoelectric figure of merit, zT, of 0.47 was obtained at 800 K in (Hf0.5Zr0.5)0.8Ti0.2NiSn0.98Sb0.02. |
Databáze: | OpenAIRE |
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