Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy
| Autor: | Naoki Murakoso, Hiroaki Tsukamoto, Hirofumi Hoshida, Haruki Yamaguchi, Yoshikazu Terai |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Analytical chemistry General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology Polarization (waves) Epitaxy 01 natural sciences lcsh:QC1-999 symbols.namesake 0103 physical sciences symbols Depolarization ratio Crystal rotation Orthorhombic symmetry 0210 nano-technology Raman spectroscopy Raman scattering lcsh:Physics Molecular beam epitaxy |
| Zdroj: | AIP Advances, Vol 8, Iss 10, Pp 105028-105028-9 (2018) |
| ISSN: | 2158-3226 |
| Popis: | Polarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy were measured to identify the Raman mode of the observed Raman active lines. Twelve of the observed 18 Raman lines showed a clear dependence of the Raman intensity on the crystal rotation angle. By factor group analysis using the orthorhombic symmetry D2h18 of β-FeSi2, five Raman lines (193, 200, 249, 401, 494 cm-1) and seven lines (175, 277, 284, 298, 327, 410, 442 cm-1) were completely assigned to the Ag and B3g modes, respectively. The depolarization ratio of Raman scattering intensities was obtained from polarized Raman spectra measured in two polarization configurations. The values of the depolarization ratio also support the assignment of the Ag and B3g modes in β-FeSi2. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|