| Popis: |
Due to its potential for high resolution and three-dimensional imaging, soft X-ray ptychography has received interest for nanometrology applications. We have analyzed the measurement time per unit area when using soft X-ray ptychography for various nanometrology applications including mask inspection and wafer inspection, and are thus able to predict (order of magnitude) throughput figures. Here we show that for a typical measurement system, using a typical sampling strategy, and when aiming for 10-15 nm resolution, it is expected that a wafer-based topology (2.5D) measurement takes approximately 4 minutes per μm2, and a full three-dimensional measurement takes roughly 6 hours per μm2. Due to their much higher reflectivity EUV masks can be measured considerably faster; a measurement speed of 0.1 seconds per μm2 is expected. However, such speeds do not allow for full wafer or mask inspection at industrially relevant throughput. |
