High-Mobility, Heterostructure Light-Emitting Transistors and Complementary Inverters
| Autor: | Paul Meredith, Paul L. Burn, Zugui Shi, Jun Li, Ebinazar B. Namdas, Mujeeb Ullah, Kristen Tandy |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Ambipolar diffusion Transistor Heterojunction 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 7. Clean energy 01 natural sciences Atomic and Molecular Physics and Optics 0104 chemical sciences Electronic Optical and Magnetic Materials law.invention Organic semiconductor law Inverter Optoelectronics Field-effect transistor Quantum efficiency Light emission Electrical and Electronic Engineering 0210 nano-technology business Biotechnology |
| Zdroj: | ACS Photonics. 1:954-959 |
| ISSN: | 2330-4022 |
| DOI: | 10.1021/ph500300n |
| Popis: | Light-emitting field effect transistors (LEFETs) are optoelectronic devices that can simultaneously execute light emission and the standard logic functions of a transistor in a single device architecture. In this article, we show that ambipolar LEFETs can be made in a bilayer structure using Super Yellow, a light-emitting polymer layer, and a high-mobility diketopyrrolo-pyrrole-based copolymer as an ambipolar charge-transporting layer. The LEFETs were fabricated in the bottom gate architecture with top-contact, air-stable, symmetric Au–Au electrodes. The devices show light emission in both electron and hole accumulation modes with an external quantum efficiency (EQE) of 0.1% at a brightness of 650 cd/m2 in electron accumulation mode, and an EQE of 0.001% at a brightness of 4 cd/m2 in hole accumulation mode. We have also demonstrated a light-emitting inverter by combining two LEFETs into the inverter architecture. The light-emitting inverter generates both electrical and optical signals with an electrical ... |
| Databáze: | OpenAIRE |
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