Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing
| Autor: | Masayuki Furuhashi, Satoshi Yamakawa, Kazuo Tsutsui, Hiroshi Iwai, Hitoshi Wakabayashi, Yiming Lei, Shingo Tomohisa, Kuniyuki Kakushima |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Annealing (metallurgy) 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Capacitor law State density 0103 physical sciences Electrode Optoelectronics Residual carbon Flat band Electrical and Electronic Engineering 0210 nano-technology Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 84:226-229 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2018.03.036 |
| Popis: | Electrical characteristics of SiC metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited SiO2 (ALD-SiO2) gate dielectrics were investigated. Post-metallization annealing (PMA) with W gate electrodes at 950 °C showed a large recovery in the flatband voltage toward the ideal value and the hysteresis was reduced to 36 mV. Interface state density (Dit) of 3 × 1011 cm−2/eV was obtained after the PMA for 5 × 103 s. The concentration of the residual carbon atoms in the SiO2 gate dielectrics has been reduced after annealing, suggesting one of the possible origins of the improvements. |
| Databáze: | OpenAIRE |
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