Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor
| Autor: | Daichi Chiba, Masaaki Tanaka, Hiroki Yamasaki, Shinobu Ohya, Tomohiro Koyama, Toshiki Kanaki |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Magnetoresistance Science FOS: Physical sciences 02 engineering and technology Applied Physics (physics.app-ph) 01 natural sciences Article law.invention Magnetization Computer Science::Hardware Architecture Condensed Matter::Materials Science law Electric field 0103 physical sciences MOSFET 010302 applied physics Condensed Matter - Materials Science Multidisciplinary Condensed matter physics Transistor Materials Science (cond-mat.mtrl-sci) Physics - Applied Physics 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Modulation Medicine Field-effect transistor Condensed Matter::Strongly Correlated Electrons 0210 nano-technology Voltage |
| Zdroj: | Scientific Reports, Vol 8, Iss 1, Pp 1-7 (2018) Scientific Reports |
| ISSN: | 2045-2322 |
| Popis: | A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current IDS modulation by a gate-source voltage VGS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large IDS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that IDS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by VGS. This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs. Comment: 29 pages |
| Databáze: | OpenAIRE |
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