Evolution of microstructure and phase in amorphous, protocrystalline, and microcrystalline silicon studied by real time spectroscopic ellipsometry
| Autor: | Joohyun Koh, Chi Chen, Andre S. Ferlauto, G.M. Ferreira, Yeeheng Lee, R.J. Koval, C.R. Wronski, Joshua M. Pearce, Robert W. Collins |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Spectroscopic ellipsometry
Fabrication Materials science Silicon Renewable Energy Sustainability and the Environment Thin films Analytical chemistry chemistry.chemical_element Microstructure Hydrogenated silicon Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid chemistry Plasma-enhanced chemical vapor deposition Phase (matter) Protocrystalline Thin film |
| Zdroj: | Electrical and Computer Engineering Publications |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/s0927-0248(02)00436-1 |
| Popis: | Real time spectroscopic ellipsometry has been applied to develop deposition phase diagrams that can guide the fabrication of hydrogenated silicon (Si:H) thin films at low temperatures (< 300°C) for highest performance electronic devices such as solar cells. The simplest phase diagrams incorporate a single transition from the amorphous growth regime to the mixed-phase (amorphous + microcrystalline) growth regime versus accumulated film thickness [the a → (a + μc) transition]. These phase diagrams have shown that optimization of amorphous silicon (a-Si:H) intrinsic layers by RF plasma-enhanced chemical vapor deposition (PECVD) at low rates is achieved using the maximum possible flow ratio of H2 to SiH4 that can be sustained while avoiding the a → (a + μc) transition. More recent studies have suggested that a similar strategy is appropriate for optimization of p-type Si:H thin films. The simple phase diagrams can be extended to include in addition the thickness at which a roughening transition is detected in the amorphous film growth regime. It is proposed that optimization of a-Si:H in higher rate RF PECVD processes further requires the maximum possible thickness onset for this roughening transition. © 2002 Elsevier Science B.V. All rights reserved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect