Design and characteristics of n-channel insulated-gate field-effect transistors

Autor:	R.H. Dennard, D. L. Critchlow, Stanley E. Schuster
Rok vydání:	2000
Předmět:	Engineering General Computer Science business.industry Transistor Electrical engineering Gate insulator Hardware_PERFORMANCEANDRELIABILITY Experimental Devices Engineering physics law.invention law Hardware_INTEGRATEDCIRCUITS N channel Field-effect transistor IBM business Hardware_LOGICDESIGN
Zdroj:	IBM Journal of Research and Development. 44:70-82
ISSN:	0018-8646
DOI:	10.1147/rd.441.0070
Popis:	An n-channel insulated-gate field-effect transistor technology established at IBM Research has served as the basis for further development leading to FET memory. Designs and characteristics of experimental devices of 500 and 1000 A gate insulator thicknesses are presented, with particular attention to the effects of source-drain spacing.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::909ea01b00c02e09537b2a8bfe503d48 https://doi.org/10.1147/rd.441.0070 Zobrazit plný text záznamu