Electronic passivation of Si(111) by Ga–Se half-sheet termination

Autor:	E. Wisotzki, Dino Tonti, Andreas Klein, A. Thissen, R. Rudolph, Wolfram Jaegermann, A. B. M. O. Islam, Rainer Fritsche, C. Pettenkofer
Jazyk:	angličtina
Rok vydání:	2021
Předmět:	Surface (mathematics) Physics and Astronomy (miscellaneous) Silicon Passivation Low-energy electron diffraction Sequential deposition Van der Waals surface Analytical chemistry chemistry.chemical_element symbols.namesake chemistry Electron diffraction X-ray photoelectron spectroscopy symbols
Popis:	A Si(111):GaSe van der Waals surface is prepared using sequential deposition of Ga and Se at elevated temperature on a Si(111)-7��7 surface. Surface properties were investigated by soft x-ray photoelectron spectroscopy and low-energy electron diffraction. The Si(111)-1��1:GaSe surface remains with electronic surface potentials near flatband condition.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fcf67b830c3ebdad90c54cc6c521b14 http://tuprints.ulb.tu-darmstadt.de/19835/ Zobrazit plný text záznamu