Raman scattering in boron-doped single-crystal diamond used to fabricate Schottky diode detectors
| Autor: | Giuliana Faggio, Giuseppe Prestopino, Saveria Santangelo, I. Ciancaglioni, Marco Marinelli, Giacomo Messina |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Radiation
Materials science business.industry Material properties of diamond Doping Settore FIS/01 - Fisica Sperimentale Diamond Schottky diode chemistry.chemical_element Chemical vapor deposition engineering.material Atomic and Molecular Physics and Optics Diamond type symbols.namesake chemistry engineering symbols Optoelectronics business Raman spectroscopy Boron Spectroscopy |
| Popis: | Thanks to its exceptional physical and electronic properties, diamond is an attractive material for electronic devices working at high temperature and in harsh chemical environment. Its use as a semiconducting material for electronics is related to the possibility of doping it in order to control its conductivity. Semiconducting p-type diamond films can be grown when boron is introduced into the film. In this work, boron-doped (B-doped) homoepitaxial diamond films are grown by Microwave Plasma Enhanced Chemical Vapor Deposition. Raman and electrical characterizations are carried out on the films as a function of boron doping level. As the boron content increases, we observe systematic modifications in the Raman spectra of single-crystal diamonds. A significant change in the lineshape of the first-order Raman peak, as well as a wide and structured signal at lower wavenumbers, appears simultaneously in samples grown with higher boron content. A single crystal diamond Schottky diode based on a metal/intrinsic/p-type diamond junction is analysed. |
| Databáze: | OpenAIRE |
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