MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits

Autor: H Kizuki, R. Gibis, P. Harde, Harald Künzel, P Albrecht, Ronald Kaiser, G Urmann
Přispěvatelé: Publica
Rok vydání: 2000
Předmět:
semiinsulating waveguides
Materials science
Fabrication
iii-v semiconductors
Mineralogy
molecular beam epitaxial growth
Integrated circuit
interface structure
Epitaxy
Waveguide (optics)
laser waveguide butt-joints
fe-doped layers
law.invention
Inorganic Chemistry
law
sem
Materials Chemistry
integrated optoelectronics
metal organic molecular beam epitaxy
integrated photonic circuits
Electronic circuit
optical planar waveguides
lateral growth interface
business.industry
epitaxial growth
Photonic integrated circuit
semiconductor epitaxial layers
Condensed Matter Physics
semiconductor growth
selective area deposition
indium compounds
composition dependence
Optoelectronics
semiinsulating layers
fabrication process
Photonics
business
semiconductor doping
optoelectronic integration
scanning electron microscopy
Molecular beam epitaxy
Zdroj: Journal of Crystal Growth. 209:463-470
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(99)00599-0
Popis: Basic developmental steps are outlined for the application of metal organic molecular beam epitaxy as an epitaxial fabrication process for InP-based integrated photonic circuits. Besides high-quality performance of the individual devices, implementation of Fe-doped semi-insulating layers and selective area deposition of GaInAsP for the whole composition range are of concern. Low-loss semi-insulating waveguides were fabricated for optically interconnecting and electrically isolating different devices at deposition conditions that have proven adequate for selective area growth and, simultaneously, for effective suppression of Fe-movement. Fabricated laser/waveguide butt-joints, a basic building block for any integrated photonic circuit, demonstrate the potential of metal organic molecular beam epitaxy to form practically ideal lateral growth interfaces without compromising on device performance.
Databáze: OpenAIRE
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