Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications
| Autor: | Fabien Bayle, Andrea Cattoni, Jean-Christophe Harmand, Valerio Piazza, Laurent Travers, C. Himwas, Maria Tchernycheva, Gilles Patriarche, Stéphane Collin, Fabrice Oehler, Omar Saket, François H. Julien |
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| Přispěvatelé: | Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Schottky barrier Nanowire Bioengineering 02 engineering and technology Conductivity 010402 general chemistry 01 natural sciences 7. Clean energy law.invention [SPI.MAT]Engineering Sciences [physics]/Materials Impurity law Solar cell General Materials Science [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS business.industry Mechanical Engineering Electron beam-induced current Doping General Chemistry 021001 nanoscience & nanotechnology 0104 chemical sciences Mechanics of Materials [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Nanotechnology Nanotechnology, Institute of Physics, 2020, 31 (14), pp.145708. ⟨10.1088/1361-6528/ab62c9⟩ |
| ISSN: | 0957-4484 1361-6528 0268-1242 |
| Popis: | International audience; Axial p-n and p-in junctions in GaAs 0.7 P 0.3 nanowires are demonstrated and analysed using electron beam induced current microscopy. Organized self-catalysed nanowire arrays are grown by molecular beam epitaxy on nanopatterned Si substrates. The nanowires are doped using Be and Si impurities to obtain p-and n-type conductivity, respectively. A method to determine the doping type by analysing the induced current in the vicinity of a Schottky contact is proposed. It is demonstrated that for the applied growth conditions using Ga as a catalyst, Si doping induces an n-type conductivity contrary to the GaAs self-catalysed nanowire case, where Si was reported to yield a p-type doping. Active axial nanowire p-n junctions having a homogeneous composition along the axis are synthesized and the carrier concentration and minority carrier diffusion lengths are measured. To the best of our knowledge, this is the first report of axial p-n junctions in self-catalyzed GaAsP nanowires. |
| Databáze: | OpenAIRE |
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