Combined optimization of electrical and mechanical parameters of in-plane and out-of-plane gap-closing electrostatic Vibration Energy Harvesters (VEHs)
Autor: | Raphael Guillemet, Philippe Basset, Tarik Bourouina, Dimitri Galayko |
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Přispěvatelé: | Circuits Intégrés Numériques et Analogiques (CIAN), Laboratoire d'Informatique de Paris 6 (LIP6), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS) |
Jazyk: | angličtina |
Rok vydání: | 2010 |
Předmět: |
Engineering
Mechanical engineering 02 engineering and technology 7. Clean energy 01 natural sciences Capacitance Acceleration 0103 physical sciences [INFO]Computer Science [cs] Mechanical energy Engineering(all) Electronic circuit 010302 applied physics business.industry Energy scavenging Electrical engineering General Medicine 021001 nanoscience & nanotechnology Vibration energy harvesting (VEH) Vibration Transducer Electrostatic transduction 0210 nano-technology business Energy harvesting Voltage |
Zdroj: | EUROSENSORS European Conference on sensors, actuators and microsystems EUROSENSORS European Conference on sensors, actuators and microsystems, Sep 2010, Linz, Austria. pp.1172-1175, ⟨10.1016/j.proeng.2010.09.320⟩ |
Popis: | This paper studies the vibration energy harvesting (VEH) capabilities for one electrostatic mechanism: the out-of-plane gap-closing (OPGC) converter. The goal is to maximize the output energy harvested from a MEMS device while preventing the integrity of the conditioning circuit. The originality of this work lies in the optimization taking into account both electrical and mechanical aspects and studying at the same time the consequence of the voltage limitations on the transducer. After a reminder of working principle of the VEH at constant charge, we'll propose an optimal design of the structure, analysing the consequences of an external acceleration's fluctuation and a way to remedy this with two different approaches. Also, we'll study the influence of the additional parallel (parasitic) capacitance. |
Databáze: | OpenAIRE |
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