| Autor: |
H. Dambkes, J. Wenger, N.H.L. Koster, P. Narozny, Ingo Wolff, Stefan Dr. Kosslowski, Franz-Josef Tegude, R.M. Bertenburg |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
GaAs IC Symposium Technical Digest 1992. |
| DOI: |
10.1109/gaas.1992.247210 |
| Popis: |
Two Ka-band amplifiers in coplanar waveguide (CPW) technology are presented. The four-stage design is based on 0.3- mu m MESFETs, whereas in the three-stage amplifier 0.25- mu m high-electron-mobility transistors (HEMTs) are used. The monolithic microwave integrated circuits (MMICs) are designed for a gain of 20 dB. The authors present the realized MMICs and in particular the way in which typical difficulties arising from transforming theoretical demands into a coplanar circuit layout can be overcome. The applicability and accuracy of the developed design procedures are demonstrated by comparison of simulated and measured results. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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