Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films
| Autor: | Luis Zamora-Peredo, Víctor Hugo Méndez-García, Leandro García-González, P. G. González, T. Hernandez-Quiroz, J. Hernández-Torres, A. Gutierrez-Franco, A. Cisneros-de la Rosa |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Photoluminescence Silicon Article Subject Band gap Energy-dispersive X-ray spectroscopy Analytical chemistry chemistry.chemical_element 02 engineering and technology Nitride 01 natural sciences Analytical Chemistry chemistry.chemical_compound symbols.namesake 0103 physical sciences lcsh:QC350-467 Carbon nitride Spectroscopy 010302 applied physics 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Amorphous carbon chemistry symbols 0210 nano-technology Raman spectroscopy lcsh:Optics. Light |
| Zdroj: | Journal of Spectroscopy, Vol 2016 (2016) |
| ISSN: | 2314-4920 |
| DOI: | 10.1155/2016/5810592 |
| Popis: | Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the other associated withCNxfilms located at ≈2.13±0.02 eV. Results show an increase in the optical band gap from 2.11 to 2.15 eV associated with the increase in the N/C ratio. Raman spectroscopy measurements showed a dominantDband.ID/IGratio reaches a maximum value for N/C ≈ 3.03 when the optical band gap is 2.12 eV. Features observed by the photoluminescence and Raman studies have been associated with the increase in the carbon sp2/sp3ratio due to presence of high nitrogen content. |
| Databáze: | OpenAIRE |
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