Thermal growth of silicon oxynitride films on Si: A reaction-diffusion approach

Autor: S. Rigo, R. M. C. de Almeida, Isabelle Trimaille, J.-J. Ganem, Israel Jacob Rabin Baumvol
Přispěvatelé: Groupe de Physique des Solides (GPS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS)
Rok vydání: 2004
Předmět:
Zdroj: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2004, 95, pp.1770-1773. ⟨10.1063/1.1639139⟩
Journal of Applied Physics, 2004, 95, pp.1770-1773. ⟨10.1063/1.1639139⟩
ISSN: 1089-7550
0021-8979
DOI: 10.1063/1.1639139
Popis: We present some experimental results and propose a reaction-diffusion model to describe thermal growth of silicon oxynitride films on Si in NO and N2O, as well as annealing in NO of thermally grown silicon oxide films on Si. We obtain growth kinetics and N and O depth distributions for the different growth routes by changing only initial and boundary conditions of a set of nonlinear differential equations. The results suggest that the puzzling differences in film growth rate and N incorporation originate from dynamical effects, rather than in differences in chemical reactions.
Databáze: OpenAIRE