Thermal growth of silicon oxynitride films on Si: A reaction-diffusion approach
Autor: | S. Rigo, R. M. C. de Almeida, Isabelle Trimaille, J.-J. Ganem, Israel Jacob Rabin Baumvol |
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Přispěvatelé: | Groupe de Physique des Solides (GPS), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS) |
Rok vydání: | 2004 |
Předmět: |
Materials science
Silicon oxynitride Silicon oxidation Annealing (metallurgy) General Physics and Astronomy chemistry.chemical_element surface chemistry 02 engineering and technology 01 natural sciences Chemical reaction Condensed Matter::Materials Science chemistry.chemical_compound 0103 physical sciences Reaction–diffusion system Boundary value problem Growth rate Silicon oxide nonlinear differential equations 010302 applied physics chemical reactions silicon Física reaction-diffusion systems insulating thin films 021001 nanoscience & nanotechnology PACS: 68.55.Ac 81.15.Aa 81.65.Mq chemistry Chemical physics nitridation elemental semiconductors silicon compounds 0210 nano-technology |
Zdroj: | Repositório Institucional da UFRGS Universidade Federal do Rio Grande do Sul (UFRGS) instacron:UFRGS Journal of Applied Physics Journal of Applied Physics, American Institute of Physics, 2004, 95, pp.1770-1773. ⟨10.1063/1.1639139⟩ Journal of Applied Physics, 2004, 95, pp.1770-1773. ⟨10.1063/1.1639139⟩ |
ISSN: | 1089-7550 0021-8979 |
DOI: | 10.1063/1.1639139 |
Popis: | We present some experimental results and propose a reaction-diffusion model to describe thermal growth of silicon oxynitride films on Si in NO and N2O, as well as annealing in NO of thermally grown silicon oxide films on Si. We obtain growth kinetics and N and O depth distributions for the different growth routes by changing only initial and boundary conditions of a set of nonlinear differential equations. The results suggest that the puzzling differences in film growth rate and N incorporation originate from dynamical effects, rather than in differences in chemical reactions. |
Databáze: | OpenAIRE |
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