Towards reduced threshold voltages for vertical power Mosfet transistors
| Autor: | L. Gerbaud, Nicolas Rouger, Jean-Christophe Crebier, H. X. Nguyen, T. Simonot, Jean-Louis Sanchez, A. Bourennane |
|---|---|
| Přispěvatelé: | Laboratoire de Génie Electrique de Grenoble (G2ELab), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT) |
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
010302 applied physics
Materials science Negative-bias temperature instability Switched-mode power supply Reverse short-channel effect business.industry 020208 electrical & electronic engineering [SPI.NRJ]Engineering Sciences [physics]/Electric power Electrical engineering 02 engineering and technology Power factor Hardware_PERFORMANCEANDRELIABILITY Voltage optimisation Overdrive voltage 01 natural sciences Hardware_GENERAL 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering Hardware_INTEGRATEDCIRCUITS Power semiconductor device Voltage regulation business Hardware_LOGICDESIGN |
| Zdroj: | ISIE 2011 ISIE 2011, Jun 2011, Gdansk, Poland HAL |
| Popis: | International audience; The threshold voltage of insulated gate power transistors usually is around 3 to 4V and their nominal gate to source voltage between 15 and 20V. These unanimously recognized electrical characteristics are questioned in this paper in order to evaluate which benefits could be drawn from a reduction of the threshold voltage of power transistors. Logic level MOSFETs already exist, but this paper chooses to study theoretically the electrical and physical characteristics of power transistors as a function of the threshold voltage to see if these electrical values of power electronics standards are still appropriate. It appears that the reduction of the threshold voltage of power MOSFET reduces the amount of control power and may improve switching characteristics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|