Nano-orbitronics in silicon
| Autor: | Murdin, B.N., Litvinenko, K., Li, J., Bowyer, E., Pang, M., Greenland, P.T., Villis, B., Aeppli, G., Meer, A.F.G. van der, Redlich, B., Engelkamp, H., Pidgeon, C.R., Bigot, J.-Y., Hübner, W., Rasing, T., Chantrell, R. |
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| Přispěvatelé: | Bigot, J.-Y., Hübner, W., Rasing, T., Chantrell, R. |
| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | Bigot, J.-Y.; Hübner, W.; Rasing, T. (ed.), Ultrafast Magnetism I : Proceedings of the International Conference UMC 2013 Strasbourg, France, October 28th-November 1st, 2013, pp. 92-93 Springer Proceedings in Physics ; 159, 92-93. Berlin : Springer International Publishing STARTPAGE=92;ENDPAGE=93;TITLE=Springer Proceedings in Physics ; 159 Springer Proceedings in Physics ISBN: 9783319077420 |
| Popis: | Shallow donor impurities in silicon, once frozen out at low temperature, share many properties in common with free hydrogen atoms [1]. They have long been the subject of spectroscopic investigation, but it is only very recently [2,3] that it has been possible to investigate the time-domain dynamics of orbital excitations such as the 1 s to 2p, due to the difficulty of obtaining short, intense pulses in the relevant wavelength range. These new techniques make shallow donors (and also acceptors [4]) attractive for studying atomic physics effects, and for applications in quantum information. We have measured the population dynamics of electrons orbiting around phosphorus impurities in commercially-available silicon, and shown that the lattice relaxation lifetime is about 200 ps, only 1 order of magnitude shorter than the radiative lifetime of free hydrogen. |
| Databáze: | OpenAIRE |
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