InGaAs-OI Substrate Fabrication on a 300 mm Wafer
| Autor: | Thierry Baron, Pascal Besson, Mickail Martin, Christophe Morales, Sebastien Sollier, Maryline Cordeau, Ionut Radu, Amelie Salaun, Thomas Signamarcheix, Ludovic Ecarnot, Marie-Christine Roure, Elodie Beche, Daniel Delprat, Christellle Veytizou, Gweltaz Gaudin, Sylvie Favier, Frank Fournel, Frédéric Mazen, Julie Widiez, Patrice Gergaud |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Fabrication InGaAs Wafer bonding Insulator (electricity) 02 engineering and technology Direct bonding Epitaxy 01 natural sciences Smart CutTM 0103 physical sciences Al2O3 Surface roughness Electronic engineering Wafer direct bonding thin layer transfer Electrical and Electronic Engineering 010302 applied physics Atomic force microscopy business.industry lcsh:Applications of electric power lcsh:TK4001-4102 021001 nanoscience & nanotechnology Optoelectronics 0210 nano-technology business |
| Zdroj: | Journal of Low Power Electronics and Applications; Volume 6; Issue 4; Pages: 19 Journal of Low Power Electronics and Applications, Vol 6, Iss 4, p 19 (2016) |
| ISSN: | 2079-9268 |
| DOI: | 10.3390/jlpea6040019 |
| Popis: | In this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs) wafer on insulator (InGaAs-OI) substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low temperature direct wafer bonding (DWB) and Smart CutTM technology. Three key process steps of the integration were therefore specifically developed and optimized. The first one was the epitaxial growing process, designed to reduce the surface roughness of the InGaAs film. Second, direct wafer bonding conditions were investigated and optimized to achieve non-defective bonding up to 600 °C. Finally, we adapted the splitting condition to detach the InGaAs layer according to epitaxial stack specifications. The paper presents the overall process flow that achieved InGaAs-OI, the required optimization, and the associated characterizations, namely atomic force microscopy (AFM), scanning acoustic microscopy (SAM), and HR-XRD, to insure the crystalline quality of the post transferred layer. |
| Databáze: | OpenAIRE |
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