Optical and electrical characterization of poly-Si/SiOx contacts and their implications on solar cell design
| Autor: | Martin Hermle, Christian Reichel, Massimo Nicolai, Ralph Müller, Frank Feldmann |
|---|---|
| Přispěvatelé: | F. Feldmann, M. Nicolai, R. Muller, C. Reichel, M. Hermle, Publica |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Infrared Herstellung und Analyse von hocheffizienten Solarzellen 02 engineering and technology passivating contact 01 natural sciences law.invention law 0103 physical sciences Solar cell Electronic engineering Free carrier absorption Absorption (electromagnetic radiation) Solarzellen - Entwicklung und Charakterisierung Common emitter 010302 applied physics business.industry Doping free carrier absorption 021001 nanoscience & nanotechnology Characterization (materials science) Silicium-Photovoltaik poly-Si Photovoltaik Optoelectronics TOPCon 0210 nano-technology business Layer (electronics) |
| Zdroj: | Energy Procedia. 124:31-37 |
| ISSN: | 1876-6102 |
| Popis: | The scope of this paper lies on the phenomenon of free-carrier absorption (FCA) in heavily phosphorus-doped poly-Si layers, applied at solar cells featuring poly-Si/SiO x passivating contacts at the rear. Firstly, FCA is investigated on test structures featuring poly-Si contacts of different thickness and doping level. Secondly, these passivating contacts are integrated into the rear of solar cells featuring a boron-diffused emitter at the front. The infrared (IR) response of the solar cells is analyzed and FCA losses are quantified. In agreement with theory, it is shown that J sc losses due to FCA increase with poly-Si doping level and thickness. For instance, a total J sc loss of ~0.5 mA/cm² is obtained for a 145 nm thick poly-Si layer with a doping concentration of 1.9x10 20 cm -3 . |
| Databáze: | OpenAIRE |
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