SHG in doped GaSe:In crystals
Autor: | Hong-Zhi Zhang, Zhi-Hui Kang, Feng-Guang Wu, Grigory V. Lanskii, Zhi-Shu Feng, Jin-Yue Gao, Tatyana A. Gavrilova, Yury M. Andreev, Viktor V. Atuchin, Yun Jiang |
---|---|
Rok vydání: | 2008 |
Předmět: |
Materials science
Light Transducers chemistry.chemical_element Gallium Lasers Solid-State law.invention Selenium Optics law Scattering Radiation Computer Simulation Emission spectrum business.industry Doping Second-harmonic generation Equipment Design Atmospheric temperature range Models Theoretical Laser Atomic and Molecular Physics and Optics Equipment Failure Analysis Refractometry chemistry Attenuation coefficient business Crystallization Indium Solid solution |
Zdroj: | Optics express. 16(13) |
ISSN: | 1094-4087 |
Popis: | Optical transmission range and phase matching (PM) conditions for second harmonic generation (SHG) of Er3+:YSGG and CO2 laser in indium doped GaSe:In(0.1, 1.23, 2.32 mass%) are studied in comparison with these in pure and sulfur doped GaSe:S(0.09, 0.5, 2.2, 3 mass%) crystals. No changes in transparency curve are found in GaSe crystals up to 2.32 mass% indium content, but as small change as 0.18 degrees in PM angle for 2.79 microm Er3+:YSGG laser SHG and approximately 0.06 degrees for 9.58 microm CO2 laser emission line SHG are detected. PM properties of the crystals are evaluated as a function of temperature over the range from -165 to 230 degrees C. The value of dtheta/dT, the change in PM angle with variation of temperature, is found to be very small for GaSe:In crystals. While for SHG of Er3+:YSGG laser, dtheta/dT =22"/1 degrees C only, it is as small as -4.9"/1 degrees C for that of CO2 laser radiation. Linear variation of PM angle with temperature increasing is an indicator of absence of crystals structure transformation within temperature range from -165 to 230 degrees C. Thus, application of GaSe:In solid solutions in high average power nonlinear optical systems seems to be prospective. |
Databáze: | OpenAIRE |
Externí odkaz: |