Optimization of tunnel-junction IBC solar cells based on a series resistance model
| Autor: | Antoine Descoeudres, G. Christmann, Jan Willem Schüttauf, M. Despeisse, S. Nicolay, P. Papet, R. Kramer, Benjamin Strahm, W. Frammelsberger, L. Andreetta, Bertrand Paviet-Salomon, Christophe Ballif, Laurie-Lou Senaud, D.L. Baetzner, D. Lachenal, B. Legradic, T. Kössler, N. Holm |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Passivation Silicon Equivalent series resistance Renewable Energy Sustainability and the Environment business.industry Contact resistance Energy conversion efficiency chemistry.chemical_element 02 engineering and technology Carrier lifetime 010402 general chemistry 021001 nanoscience & nanotechnology 7. Clean energy 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Tunnel junction Optoelectronics Wafer 0210 nano-technology business |
| Zdroj: | Solar Energy Materials and Solar Cells |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/j.solmat.2019.110036 |
| Popis: | This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. |
| Databáze: | OpenAIRE |
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