Preparation and properties of radio-frequency-sputtered half-Heusler films for use in solar cells
| Autor: | A. Grimm, Claudia Felser, Thorsten Rissom, Andreea Beleanu, Iver Lauermann, R. Klenk, D. Kieven, J. Schmidt, Thomas Gruhn, C. G. F. Blum |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Band gap Chalcopyrite Inorganic chemistry Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Copper Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry X-ray photoelectron spectroscopy Sputtering law visual_art Solar cell Materials Chemistry visual_art.visual_art_medium Lithium Layer (electronics) |
| Zdroj: | Thin Solid Films. 519:1866-1871 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2010.10.045 |
| Popis: | The class of half-Heusler compounds opens possibilities to find alternatives for II–VI or III–V compound semiconductors. We aim to find suitable substitutes for the cadmium sulphide buffer layer in chalcopyrite-based thin film solar cells, where the buffer layer is located between the p-type chalcopyrite absorber and an n-type transparent window layer. We report here the preparation of radio-frequency-sputtered lithium copper sulphide “LiCuS” and lithium zinc phosphide “LiZnP” films. The optical analysis of these films revealed band gaps between 1.8 and 2.5 eV, respectively. Chemical properties of the film surface and both interfaces between the film and a Cu ( In , Ga ) Se 2 layer and between the film and an (Zn,Mg)O layer were investigated by in-situ photoelectron spectroscopy. The valence band offsets to the Cu ( In , Ga ) Se 2 layer were estimated to be (0.4 ± 0.1) eV for “LiCuS”/ Cu ( In , Ga ) Se 2 and (0.5 ± 0.8) eV for “LiZnP”/ Cu ( In , Ga ) Se 2 . This leads to positive conduction band offsets of > 1 eV. These rather large offsets are not compatible with efficient solar cell devices. Under atmospheric conditions “LiCuS” and “LiZnP” films show rapid decomposition. |
| Databáze: | OpenAIRE |
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