Three-Dimensional Wafer Stacking Using Cu TSV Integrated with 45 nm High Performance SOI-CMOS Embedded DRAM Technology
| Autor: | John E. Barth, Norman Robson, Troy L. Graves-Abe, Bishan He, Gary W. Maier, Douglas Charles Latulipe, Chandrasekharan Kothandaraman, Ben Himmel, Kevin R. Winstel, Tuan Vo, Spyridon Skordas, Deepika Priyadarshini, John W. Golz, Kristian Cauffman, Pooja R. Batra, Deepal Wehella Gamage, B. Peethala, Alex Hubbard, Wei Lin, Subramanian S. Iyer, Toshiaki Kirihata |
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| Rok vydání: | 2014 |
| Předmět: |
SOI
wafer stacking Interconnection Materials science Silicon business.industry through-silicon-via (TSV) lcsh:Applications of electric power Silicon on insulator chemistry.chemical_element lcsh:TK4001-4102 eDRAM Tungsten EDRAM chemistry Grind Electronic engineering Optoelectronics Wafer Electrical and Electronic Engineering business Dram 3D |
| Zdroj: | Journal of Low Power Electronics and Applications Volume 4 Issue 2 Pages 77-89 Journal of Low Power Electronics and Applications, Vol 4, Iss 2, Pp 77-89 (2014) |
| ISSN: | 2079-9268 |
| Popis: | For high-volume production of 3D-stacked chips with through-silicon-vias (TSVs), wafer-scale bonding offers lower production cost compared with bump bond technology and is promising for interconnect pitches smaller than 5 µ using available tooling. Prior work has presented wafer-scale integration with tungsten TSV for low-power applications. This paper reports the first use of low-temperature oxide bonding and copper TSV to stack high performance cache cores manufactured in 45 nm Silicon On Insulator-Complementary Metal Oxide Semiconductor (SOI-CMOS) embedded DRAM (EDRAM) having 12 to 13 copper wiring levels per strata and upto 11000 TSVs at 13 µm pitch for power and signal delivery. The wafers are thinned to 13 µm using grind polish and etch. TSVs are defined post bonding and thinning using conventional alignment techniques. Up to four additional metal levels are formed post bonding and TSV definition. A key feature of this process is its compatibility with the existing high performance POWER7™ EDRAM core requiring neither modification of the existing CMOS fabrication process nor re-design since the TSV RC characteristic is similar to typical 100–200 µm length wiring load enabling 3D macro-to-macro signaling without additional buffering Hardware measurements show no significant impact on device drive and off-current. Functional test at wafer level confirms 2.1 GHz 3D stacked EDRAM operation. |
| Databáze: | OpenAIRE |
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