A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

Autor: Jusung Kim, Dzuhri Radityo Utomo, Hafiz Usman Mahmood, Seok-Kyun Han, Sang-Gug Lee
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: Electronics, Vol 9, Iss 3, p 539 (2020)
Electronics
Volume 9
Issue 3
ISSN: 2079-9292
Popis: This paper presents a K u -band RF receiver front-end with broadband impedance matching and amplification. The major building blocks of the proposed receiver front-end include a wideband low-noise amplifier (LNA) employing a cascade of resistive feedback inverter (RFI) and transformer-loaded common source amplifier, a down-conversion mixer with push&ndash
pull transconductor and complementary LO switching stage, and an output buffer. Push&ndash
pull architecture is employed extensively to maximize the power efficiency, bandwidth, and linearity. The proposed two-stage LNA employs the stagger-tuned frequency response in order to extend the RF bandwidth coverage. The input impedance of RFI is carefully analyzed, and a wideband input matching circuit incorporating only a single inductor is presented along with useful equivalent impedance matching models and detailed design analysis. The prototype chip was fabricated in 45-nm CMOS technology and dissipates 78 mW from a 1.2-V supply while occupying chip area of 0.29 mm 2 . The proposed receiver front-end provides 21 dB conversion gain with 7 GHz IF bandwidth, 3.5 dB NF, &minus
15.7 dBm IIP 3 while satisfying <
&minus
10 dB input matching over the whole input band.
Databáze: OpenAIRE