Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission
| Autor: | D. V. Shengurov, S.G. Pavlov, Heinz-Wilhelm Hübers, Vladimir Rumyantsev, Yu. A. Astrov, V. V. Tsyplenkov, R.Kh. Zhukavin, V.N. Shastin, A. N. Lodygin, V. B. Shuman, Nickolay Abrosimov, K. A. Kovalevsky, J. M. Klopf, L. M. Portsel |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
spectroscopy
Materials science Silicon Photoconductivity chemistry.chemical_element 02 engineering and technology magnesium Population inversion 01 natural sciences symbols.namesake 0103 physical sciences photoconductivity Stimulated emission neutral double donor 010302 applied physics population inversion Exchange interaction Relaxation (NMR) Fano resonance silicon 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry symbols stimulated Raman scattering Atomic physics 0210 nano-technology Raman scattering |
| Zdroj: | XXIII International Symposium "Nanophysics and Nanoelectronics", 11.-14.03.2019, Nizhny Novgorod, RussiaSemiconductors 53(9), 1234-1237 |
| Popis: | The results of experiments aimed at the observation of split 1s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical shift and exchange interaction energy of a neutral Mg donor in Si. The position of the 1s(E), 1s(T2), and 2s(A1) parastates determines the possibility for attaining population inversion and the specific mechanism of stimulated Raman scattering. The energy of the 1s(T2) parastate is determined from the position of the Fano resonances in the photoconductivity spectrum of Si:Mg at T = 4 K, and the energies of the 1s(T2) and 1s(E) orthostates from the transmittance spectra at elevated temperatures. On the basis of the experimental data, the relaxation rates are estimated, and the possible mechanisms of stimulated emission are analyzed. |
| Databáze: | OpenAIRE |
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