A band-modulation device in advanced FDSOI technology: Sharp switching characteristics
| Autor: | Sorin Cristoloveanu, Pascal Fonteneau, Hassan El Dirani, Yohann Solaro, Philippe Ferrari, Dominique Golanski, Charles-Alex Legrand, D. Marin-Cudraz |
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| Přispěvatelé: | Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Silicon on insulator 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 7. Clean energy Subthreshold slope Buried oxide Electronic Optical and Magnetic Materials Impact ionization Modulation 0103 physical sciences Materials Chemistry Optoelectronics Node (circuits) Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology business Voltage |
| Zdroj: | Solid-State Electronics Solid-State Electronics, Elsevier, 2016, 125, pp.103-110. ⟨10.1016/j.sse.2016.07.018⟩ |
| ISSN: | 0038-1101 |
| Popis: | International audience; A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, low leakage and an adjustable triggering voltage (VON). The Z2-FET operation relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained with the most advanced FDSOI node. |
| Databáze: | OpenAIRE |
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